Local anodic oxidation of silicon for create crossbar architecture

Paper present possibility of creation a neuromatrix in the form crossbar architecture on silicon substrate is shown. Crossbar set nanosized conductors, between which there layer titanium oxide, capable changing its conductivity under action applied voltage, it proposed to using method local anodic oxidation. The results study technological parameters oxidation and for implementation elements this memristor structures. Keywords: Silicon, titanium, oxidation, neuromatrix, crossbar.